Transistor Biasing Calculator
Learn the operating modes of one of the most important electronic components with our transistor biasing calculator.
The formula
I = I_s(e^(V/nV_T) − 1); I_D = ½k(V_GS − V_th)²
Exponential, square law, and why it matters
A diode's current rises exponentially with voltage — about a decade for every 60 mV at room temperature. That steepness is why a diode behaves like a fixed 0.7 V drop over a wide current range, and why driving one from a voltage source is destructive: 60 mV of error is a factor of ten in current.
A MOSFET in saturation follows a square law in the overdrive voltage, which is far gentler. That makes MOSFETs easier to bias and much better at paralleling, helped by their threshold falling with temperature so a hot device turns on harder and shares current — whereas a hot bipolar takes more current and runs hotter still.
The bipolar result worth knowing is that voltage gain depends on the collector current and the load resistor, not on beta. Since beta varies threefold between nominally identical parts and drifts with temperature, that independence is what makes bipolar amplifiers designable at all. The fixed-base-resistor bias shown here sets base current rather than collector current, so it inherits all of beta's variability — which is why real circuits use an emitter resistor and a divider.
The thermal voltage kT/q scales with absolute temperature, so every one of these relations shifts as a device warms. Hard-coding 25 mV is a room-temperature approximation, not a constant.